论文部分内容阅读
采用直流脉冲磁控溅射方法,在室温下生长氢化Ga掺杂ZnO薄膜(GZO/H),并通过湿法后腐蚀技术获得绒面结构。研究了室温下H2流量对薄膜结构、光电性能及表面形貌的影响。实验表明,氢化GZO(GZO/H)薄膜具有良好的(002)晶面择优取向生长,引入适当流量的H2可以有效提高薄膜的电学特性,GZO/H薄膜具有更低的电阻率以及较高的迁移率和载流子浓度。当通入H2流量为6 sccm时,薄膜电阻率为6.8×10-4Ω.cm,Hall迁移率达34.2 cm2/V.s,制备的GZO/H薄膜可见光区域平均透过率优于85%。此外,研究了H2流量对湿法腐蚀后绒面GZO/H薄膜表面形貌的影响,提出了一种薄膜绒面结构形成过程模型。
Hydrogenated Ga-doped ZnO thin films (GZO / H) were grown at room temperature by DC pulsed magnetron sputtering and the textured structure was obtained by wet post etching. The effects of H2 flux at room temperature on the structure, optical properties and surface morphology of the films were investigated. Experiments show that hydrogenated GZO / H thin films have good (002) preferred orientation growth. The introduction of a proper flow rate of H2 can effectively improve the electrical properties of the thin films. The GZO / H thin films have lower resistivity and higher Mobility and carrier concentration. When the flow rate of H2 was 6 sccm, the resistivity of the film was 6.8 × 10-4 Ω · cm and the Hall mobility was 34.2 cm2 / V.s. The average transmittance of the prepared GZO / H thin film in the visible region was better than 85%. In addition, the influence of H2 flow rate on the surface morphology of suede GZO / H thin films after wet etching was studied, and a model of suede structure formation process was proposed.