Contactless electroreflectance has been employed at room temperature to study the Fermi level pinning atundoped-n+ GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs). It is shownthat the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meVcompared to bare GaAs, whereas 1.6 ML InAs on GaAs does not modify the Fermi level. It is corzfirmed thatthe modiffication of the 1.8 ML InAs deposition on the Fermi level at GaAs surface is due to the QDs, which aresurrounded by some oxidized InAs facets, rather than the wetting layer.