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本文通过在GaAs(100)单晶衬底上MBE生长GaAs过程中形成的RHEED衍射图样,对GaAs薄膜的表面形貌进行研究。分析GaAs表面粗糙和生长时不发生RHEED强度振荡的原因。讨论在生长GaAs时出现In(Ga)As/GaAs(100)体系的RHEED衍射图样这种异常现象的原因。
In this paper, the surface morphology of GaAs thin films is studied by RHEED diffraction pattern formed during MBE growth on GaAs (100) single crystal substrate by MBE. Analysis of GaAs surface roughness and growth does not occur RHEED intensity oscillation reasons. The reason why the RHEED diffraction pattern of In (Ga) As / GaAs (100) system appears during the growth of GaAs is discussed.