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观察到,当用高纯铝丝(含铝99.99%)在外延基座表面划线作记号,再将外延片衬底放在该位置上,进行常规的SiCl_4-H_2还原法外延,然后将外延片用Sirtl腐蚀液显示,可看出:对应于基座上划线的位置,外延层中的小浅坑缺陷(亦被称为“雾点”、梨皮点”)
It is observed that when the epitaxial substrate surface is marked with a high purity aluminum wire (containing 99.99% of aluminum), the epitaxial substrate is placed on the surface, the conventional SiCl 4 -H 2 reduction method is used for epitaxy, and then the epitaxial Sirtl films were used to reveal the etching solution. It can be seen that, corresponding to the scribe line on the susceptor, small pit defects in the epitaxial layer (also referred to as “fog point” and “pelt point”)