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采用自制的连续定向凝固装置,借助SEM和TEM考察了在较大生长速度范围内,(R=30～2500μm/s)Al-Si共晶的生长过程,着重考察了Sb变质元素的影响。发现加Sb变质后较未加变质剂时,硅相的微观结构特征没有明显变化,但更倾向于等温生长。其生长方式与未变质时相同。
The growth process of Al-Si eutectic (R = 30 ~ 2500μm / s) was investigated by means of SEM and TEM with self-made continuous directional solidification equipment. The effects of Sb metamorphism were mainly investigated. It is found that the microstructure of the silicon phase does not change significantly when Sb is added compared with no modifier, but it is more inclined to isothermal growth. Its growth pattern is the same as when not metamorphism.