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采用自制的1 kW石英钟罩式微波等离子体化学气相沉积装置,以氢气和甲烷作为气源在镜面抛光的(100)面单晶硅片上沉积了金刚石薄膜。实验共制得两个样品,其中一个样品在制备的过程中加装了难熔的金属钽环,利用等离子体易吸附于金属钽环表面的特性,缩小了硅片中间与边缘等离子体密度差异,另外一个样品没有加装难熔的金属钽环。利用激光拉曼光谱仪和扫描电子显微镜(SEM)对制备的样品进行了表征,发现没有加装金属钽环的样品中间位置沉积的金刚石膜质量明显高于边缘位置沉积的金刚石膜,中间位置、离中间5 mm位置、边缘位置沉积膜层的厚度差别很大;加装了金属钽环的样品中间位置与边缘位置沉积的金刚石膜质量差不多,中间位置、离中间5 mm位置、边缘位置沉积膜层的厚度差别不大,上述结果证明金属钽环的加入是一种提高MPCVD法制备金刚石膜均匀性的方法。
A homemade 1 kW quartz bell jar microwave plasma CVD apparatus was used to deposit diamond films on mirror-polished (100) monocrystalline silicon wafers using hydrogen and methane as the gas source. A total of two samples were prepared. One sample was equipped with a refractory metal tantalum ring during the preparation process. The plasma was easily adsorbed on the surface of the metal tantalum ring to reduce the density difference between the middle and the edge of the wafer , Another sample did not install refractory metal tantalum ring. The prepared sample was characterized by laser Raman spectroscopy and scanning electron microscopy (SEM). It was found that the quality of the diamond film deposited in the middle of the sample without the metal tantalum ring was significantly higher than that of the diamond film deposited at the edge, In the middle of 5 mm, the thickness of the deposited film at the edge position varies greatly. The quality of the diamond film deposited at the middle and the edge of the sample with the metal tantalum ring is almost the same. The middle position, 5 mm away from the middle, Thickness of the difference is not big, the above results show that the addition of metal tantalum ring is a way to improve the uniformity of diamond film prepared by MPCVD method.