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报导了3 mm波段硅双漂移崩越二极管所需PN/N~+多层、亚微米外延材料的常规CVD生长技术,研究了实现这些高要求的多层结构的方法,得到了最佳的外延工艺条件。
The conventional CVD growth techniques for PN / N ~ + multilayer and submicron epitaxial materials for 3-nm-band silicon double-drift evanescent diodes are reported. The methods for achieving these highly demanding multilayer structures are investigated and the best epitaxial Process conditions.