为了减小硅化物形成过程中消耗的衬底硅，提出添加非晶Ｓｉ的新方法，并探索了Ｃｏ／Ｓｉ／Ｔｉ／Ｓｉ及Ｃｏ／Ｓｉ（×７）／Ｔｉ／Ｓｉ多层薄膜固相反应的两种途径．实验采用四探针、ＸＲＤ、ＲＢＳ等多种方法对固相反应过程进行了研究，对反应形成的ＣｏＳｉ２ 薄膜进行了测试分析，并探索了在ＳｉＯ２／Ｓｉ及图形片上的选择腐蚀工艺．结果表明，当选择合适的Ｃｏ∶Ｓｉ原子比，恰当的两步退火方式及选择腐蚀溶液，两种方法都可以形成自对准硅化物结构．研究了这两种固相反应过程，发现在一定的Ｃｏ∶Ｓｉ原子比范围内，这两种方法制备的ＣｏＳｉ２ 薄膜都有一定的外延特性，其中第一种途径得到的ＣｏＳｉ２ 薄膜具有十分良好的外延特性 In order to reduce the substrate silicon consumed during silicide formation, a new method of adding amorphous Si was proposed and the solid state of Co / Si / Ti / Si and Co / Si (× 7) / Ti / Si multilayer thin films Two ways to respond. The experiments were carried out using four probes, XRD, RBS and other methods to study the solid-state reaction process. The CoSi2 thin films formed by the reaction were tested and analyzed. The selective etching process on SiO2 / Si and graphitized films was also explored. The results show that the salicide structure can be formed by either of the two methods when the proper Co: Si atomic ratio, the proper two-step annealing method and the selective etching solution are selected. The two solid-state reaction processes were investigated. It was found that the CoSi2 thin films prepared by these two methods have certain epitaxial characteristics within a certain range of Co: Si atomic ratio. The CoSi2 thin films obtained by the first method have very good Epitaxy characteristics