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研究了GaAs/AlGaAs多量子阱(MQW)空间光调制器(SLM)在不同入射角度下的调制特性。对腔模位置与入射角度的关系进行了理论计算和实验验证,两者具有较好的一致性。当入射角在0°～75°之间变化时,腔模从871nm变化至845nm,可调节范围达26nm。当入射光从垂直入射变化为约45°入射时,SLM对比度从(CR)3.8提高到16.3,调制电压从9.5V下降至6.5V。理论分析和实验结果表明,入射角度调节能够有效提高GaAs/AlGaAs MQW SLM调制性能。
The modulation characteristics of GaAs / AlGaAs MQW spatial light modulator (SLM) at different incident angles were studied. The relationship between the cavity mode position and the incident angle is theoretically calculated and experimentally verified, the two have good consistency. When the incident angle varies from 0 ° to 75 °, the cavity mode changes from 871 nm to 845 nm with an adjustable range of up to 26 nm. The SLM contrast increases from (CR) 3.8 to 16.3 when the incident light changes from normal incidence to about 45 ° and the modulation voltage drops from 9.5V to 6.5V. Theoretical analysis and experimental results show that the incident angle adjustment can effectively improve the modulation performance of GaAs / AlGaAs MQW SLM.