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我们用有意地进行了金属沾污的硅片,采用缺陷腐蚀和二次离子质谱测定法,研究了干O_2和O_2/HCl氧化过程中,二氧化硅/硅界面附近的金属杂质(Cu、Fe、Cr和Ni)的特性。各种金属在热氧化过程中的再分布情况是不相同的,Cu扩散到硅中并且倾向于被二氧化硅排斥,给出的浓度峰离界面0.3～1.2微米。Fe累积在二氧化硅/硅界面附近处,而Cr倾于累积在氧化物里,硅里面的浓度较低。O_2/HCl氧化对Cu杂质的吸收能力是极好的,而对Fe和Cr杂质的吸除能力则很差。Cu和Fe杂质沉积在二氧化硅/硅界面附近的硅里面,而Cr和Ni杂质沉积在二氧化硅/硅界面附近处的二氧化硅里面。
We used a silicon wafer intentionally subjected to metal contamination to investigate the effects of metal impurities (Cu, Fe, and Fe) on the silicon dioxide / silicon interface during the oxidation of dry O_2 and O_2 / HCl by defect corrosion and secondary ion mass spectrometry. , Cr and Ni). The redistribution of the various metals in the thermal oxidation process is different. Cu diffuses into the silicon and tends to be repelled by the silicon dioxide, giving a peak concentration of 0.3 to 1.2 microns from the interface. Fe accumulates near the silica / silicon interface, whereas Cr tends to accumulate in the oxide, with a lower concentration in the silicon. The O 2 / HCl oxidation is excellent for the absorption of Cu impurities, while the absorption capacity for Fe and Cr impurities is very poor. Cu and Fe impurities are deposited in the silicon near the silicon dioxide / silicon interface while Cr and Ni impurities are deposited in the silicon dioxide near the silicon dioxide / silicon interface.