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分析了扭臂驱动结构的上电极端部位移与外加电压之间的关系 ,提出了一种具有倾斜下电极的驱动结构 ,并通过倾斜一定角度的 (111)硅片的各向异性腐蚀制作了倾斜下电极 .理论分析和实验结果表明 ,倾斜下电极的 pull-in电压几乎比平面下电极的 pull- in电压降低一半 .
The relationship between the upper electrode tip displacement and the applied voltage was analyzed. A driving structure with a tilted lower electrode was proposed and fabricated by anisotropic etching of a tilted (111) silicon wafer Tilt the lower electrode.Theoretical analysis and experimental results show that the pull-in voltage of the lower oblique electrode is almost halved than the pull-in voltage of the lower planar electrode.