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高性能的陶瓷材料例如SiC,用于高温技术是很重要的。它可用于发动机、核聚变装置及微电子工业中。在这些应用中,已经了解到各种微量杂质元素对最终产品的性能有相当大的影响。然而目前还缺乏陶瓷材料中痕量杂质分析的可靠方法。本文报导用新的湿化学—高压法,保证用高纯酸可完全溶解SiC,然后用电热原子吸收法(ETAAS)和等离子发射光谱法(ICP-AES)测定溶液中的微量元素。0.25gSiC可在HNO_3+HF混合酸中于240℃完全溶解,并用H_2SO_4冒
High-performance ceramic materials such as SiC are important for high temperature technology. It can be used in engines, fusion devices and the microelectronics industry. In these applications, it has been realized that various trace impurity elements have a considerable impact on the properties of the final product. However, there is a lack of reliable methods for the analysis of trace impurities in ceramic materials. In this paper, a new wet-chemical-high pressure process is reported to ensure the complete dissolution of SiC with high purity acid and the determination of trace elements in solution by electrothermal atomic absorption spectroscopy (ETAAS) and plasma emission spectroscopy (ICP-AES). 0.25gSiC can be completely dissolved in HNO_3 + HF mixed acid at 240 ℃, and run with H_2SO_4