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本文叙述一个采用MOS工艺的Gb分频器。该分频器内完全1μm图形设计规则的埋沟MOS(BC-MOS)场效应管组成,获得了1.64千兆(?)的最高计数频率,每级传输延迟时间为72.5微微秒。 随着LSI技术的进展,越来越迫切需要较高速度逻辑电路。用双极型电路或GaAs电路证明已经可以工作在Gb(千兆(?))范围。然而MOS电路至今尚未达到这么高速度。本文证实MOS电路对于高速应用的潜力。 MOS电路开关速度取决于基本器件的跨导和在电路中的电容。为了改善电路的性能,需要较高的载流子迁移率和较短的沟道长度。
This article describes a Gb divider using MOS technology. This divider consists of a fully buried buried MOS (BC-MOS) field-effect transistor with a 1-μm pattern design rule and achieves a maximum count frequency of 1.64 giga-steps with a propagation delay of 72.5 picoseconds per level. With the progress of LSI technology, more and more urgent need for higher speed logic circuits. Bipolar circuits or GaAs circuits prove to work in the Gb (giga) range. However, the MOS circuit has not yet reached such a high speed. This article confirms the potential of MOS circuits for high speed applications. MOS circuit switching speed depends on the basic device transconductance and capacitance in the circuit. In order to improve the performance of the circuit, higher carrier mobility and shorter channel length are required.