本文利用超高真空扫描隧道显微镜(UHVSTM),在室温下研究沉积了约0 005ML的C60分子的Si(111)7×7和Si(100)2×1再构表面在波长为266nm的激光束轰击前后的表面形貌的变化。结果表明,在266nm的激光作用下,Si(111)7×7表面上的C60分子保持完好,表面缺陷明显增加,但并没有完全破坏7×7再构形貌;而Si(100)2×1表面上的C60分子却被打碎,样品表面变得杂乱无章。 In this paper, using ultra-high vacuum scanning tunneling microscopy (UHVSTM), we studied the properties of Si (111) 7 × 7 and Si (100) 2 × 1 reconstructed surfaces with C60 molecules deposited at about 0 005ML at room temperature. Changes in surface topography before and after bombardment. The results show that the C60 molecules on Si (111) 7 × 7 surface remain intact and the surface defects increase obviously under 266nm laser irradiation without completely destroying the 7 × 7 reconfiguration morphology. However, Si (100) 2 × C60 molecules on the surface were shattered and the surface of the sample became disorganized.