对注 F、注 N以及先注 N后注 F超薄栅氧化层的击穿特性进行了实验研究 ,实验结果表明 ,在栅介质中引入适量的 F或 N都可以明显地提高栅介质的抗击穿能力 .分析研究表明 ,栅氧化层的击穿主要是由于正电荷的积累造成的 ,F或 N的引入可以补偿 Si/ Si O2 界面和 Si O2 中的 O3≡ Si·和 Si3≡ Si·等由工艺引入的氧化物陷阱和界面陷阱 ,从而减少了初始固定正电荷和 Si/ Si O2 界面态 ,提高了栅氧化层的质量 .通过比较发现 ,注 N栅氧化层的抗击穿能力比注 F栅氧化层强 The experimental results show that the introduction of an appropriate amount of F or N in the gate dielectric can significantly improve the gate dielectric breakdown resistance The analysis shows that the breakdown of the gate oxide layer is mainly caused by the accumulation of positive charges, and the introduction of F or N can compensate O3≡Si · and Si3≡Si · in the Si / Si O2 interface and Si O2 The oxide traps and interface traps introduced by the process reduce the initial positive charge and the Si / Si O2 interface state and improve the gate oxide quality.Through comparison, it is found that the breakdown resistance of the N gate oxide layer is better than that of F Strong gate oxide