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应用直流和中频交流程序自动控制磁控溅射设备,利用金属T i靶、纯F e靶制备出了有一定厚度的质量较好的不同氧流量的F e掺杂T iO2薄膜,T iO2薄膜被沉积在玻璃基底上。薄膜的制备用程序控制。通过在T iO2薄膜中形成一定的结构,并利用各种分析测试手段对其性能进行了测试,初步探讨了不同氧流量对T iO2薄膜的影响。实验表明程序自动控制不同氧流量F e掺杂T iO2薄膜的特性有了很大改变。
The magnetron sputtering equipment was automatically controlled by AC and DC AC program. F e-doped T iO2 thin films with different oxygen flow rate and high quality were prepared by metal T i target and pure F e target. Is deposited on a glass substrate. Preparation of the film is controlled by a program. Through the formation of certain structure in T iO2 thin film, and the use of various analytical test methods to test its performance, the effects of different oxygen flux on T iO2 thin film were discussed preliminarily. Experiments show that the program automatically controls the oxygen flow F e doping T iO2 thin film has greatly changed the characteristics.