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InN材料具有着巨大的应用潜力,伴随着本身特性的揭秘,已成为最近两年内最热门的研究材料之一．介绍了InN纳米线的基本特性,讨论了InN纳米线材料的制备技术及其应用．利用CVD法研制的GaN纳米线的直径已达到40-80 nm;长度可以达到1 000 nm;InN纳米线具有InN的六方纤锌矿结构,其PL谱具有宽的发射峰,谱峰中心位于1．85 eV．
InN materials have tremendous potential for application. With the discovery of their own characteristics, InN materials have become one of the hottest research materials in the past two years. The basic characteristics of InN nanowires are introduced. The preparation technology and application of InN nanowires materials are discussed. The diameter of GaN nanowires fabricated by CVD has reached 40-80 nm and the length can reach 1 000 nm. InN nanowires have a hexagonal wurtzite structure with InN. The PL spectrum has a broad emission peak centered at 1 .85 eV.