Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature,and then polycrystalline thin films of Cu_2ZnSnS_4(CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550℃for 3 h.Fabricated CZTS thin films were characterized by X-ray diffraction,energy dispersive X-ray spectroscopy,ultraviolet-visible-near infrared spectrophotometry,the Hall effect system,and 3D optical microscopy.The experimental results show that,when the ratios of[Cu]/([Zn]+[Sn]) and[Zn]/[Sn]in the CZTS are 0.83 and 1.15,the CZTS thin films possess an absorption coefficient of larger than 4.0 x 10~4 cm~(-1) in the energy range 1.5-3.5 eV,and a direct band gap of about 1.47 eV.The carrier concentration,resistivity and mobility of the CZTS film are 6.98 x 10~(16) cm~(-3),6.96Ω-cm,and 12.9 cm~2/(V-s),respectively and the conduction type is p-type.Therefore,the CZTS thin films are suitable for absorption layers of solar cells. Sn / Cu / ZnS precursors were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu_2ZnSnS_4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at 550 ℃ for 3 h. Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. the experimental results show that, when the ratios of [Cu] / [Zn] + [Sn]) and [Zn] / [Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of greater than 4.0 x 10 ~ 4 cm -1 in the energy range 1.5-3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS films are 6.98 x 10 ~ (16) cm -3, 6.96 Ω-cm, and 12.9 cm ~ 2 / (Vs), respectively and the conduction type is p-type. Beforefore the the CZTS thin films are suitable for absorption layers of solar cells.