【摘 要】
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A 50-60 V class ultralow specific on-resistance (Ron,sp) trench power MOSFET is proposed.The structure is characterized by an n+-layer which is buried on the to
【机 构】
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College of Communication Engineering, Chongqing University, Chongqing 400044“,”No.24 Research Instit
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A 50-60 V class ultralow specific on-resistance (Ron,sp) trench power MOSFET is proposed.The structure is characterized by an n+-layer which is buried on the top surface of the p-substrate and connected to the drain n+-region.The low-resistance n+-layer shortens the motion-path in high-resistance n-drift region for the carriers,and therefore,reduces the Ron,sp in the on-state.Electrical characteristics for the proposed power MOSFET are analyzed and discussed.The 50-60 V class breakdown voltages (VB) with Ron,sp less than 0.35 mΩ.cm2 are obtained.Compared with several power MOSFETs,the proposed power MOSFET has a significantly optimized dependence of Ron,sp on VB.
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