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选用了三种型号的PNP输入双极运算放大器,在正偏和零偏状态下进行了辐照实验,由此对高剂量率辐照后高温退火加速评估方法进行了探索。结果表明,辐照后高温退火的实验结果乘以一定的倍数因子,便可较好地模拟PNP输入双极运算放大器的低剂量率辐照损伤,根据曲线的变化规律可以较快地鉴别器件是否存在低剂量率辐射损伤增强效应。
Three types of PNP input bipolar op amps were selected to conduct the irradiation experiment under positive bias and zero bias conditions, and the accelerated evaluation method of high temperature annealing after high dose rate radiation was explored. The results show that the experimental results of high temperature annealing after irradiation are multiplied by a certain factor to simulate the low dose rate radiation damage of the PNP input bipolar operational amplifier. According to the variation law of the curve, the device can be quickly identified There is a low dose rate radiation damage enhancement effect.