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采用丝网印刷方法制备了FeS2 (pyrite)薄膜 ,用x射线衍射确定了样品FeS2 (pyrite)薄膜的晶体结构 ,并用Rietveld方法对样品的结构进行了精修 ,确定了样品的点阵常数、键长、键角、硫原子占位等结构参数 .研究了膜厚对方块电阻、载流子浓度、霍尔迁移率、光能隙等光电参数的影响
The crystal structure of the FeS2 (pyrite) thin film was confirmed by X-ray diffraction. The lattice structure of the sample was refined by Rietveld method. The lattice constants, bond Length, bond angle, and sulfur atom occupancy, etc. The effects of film thickness on the photoelectric parameters such as square resistance, carrier concentration, Hall mobility and optical energy gap were studied