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随着三维集成阻变存储器(Resistive Random Access Memory,RRAM)集成度的不断提高,由焦耳热引起的热效应将会严重影响器件的稳定性、可靠性及寿命.因此,三维集成RRAM将面临最大的挑战是如何解决器件的热效应问题,而这种热效应现象伴随着器件特征尺寸的下降,热量分布对于RRAM器件的影响(如能耗、热稳定性等)变得尤为突出.特别是随着存储单元密度的不断提升,相邻单元之间的距离不断减小,邻近单元的热串扰将严重制约三维集成RRAM的发展和应用.本文基于电-热类比方法,建立了一种新的三维集成阻变存储器阵列的电-热紧凑模型;模型的准确性通过ANSYS物理场仿真软件进行了验证.该模型能够在Cadence中同时进行阵列电学特性和热学特性的仿真;本文提出的紧凑模型可以用于预测三维集成RRAM阵列中的热分布状况及分析热串扰.
With the increasing integration of Resistive Random Access Memory (RRAM), the thermal effect caused by Joule heating will seriously affect the stability, reliability and lifetime of the device, so the three-dimensional integrated RRAM will face the largest The challenge is how to solve the problem of thermal effect of the device, and this phenomenon of thermal effect is accompanied by the decrease of the feature size of the device, the influence of the heat distribution on the RRAM device (such as energy consumption, thermal stability, etc.) Density and the distance between adjacent units continue to decrease, thermal crosstalk of adjacent units will severely restrict the development and application of three-dimensional integrated RRAM.In this paper, a new three-dimensional integrated resistance change Memory array. The accuracy of the model was verified by the ANSYS physics simulation software, which simulates the electrical and thermal properties of the array simultaneously in Cadence. The compact model proposed in this paper can be used to predict the three-dimensional Thermal Distribution in Integrated RRAM Arrays and Analysis of Thermal Crosstalk.