文章提出了一种3-μm中红外波段偏振无关且CMOS兼容的石墨烯调制器,器件主要包括两部分:模式转换结构及石墨烯调制器.该调制器不仅满足于CMOS兼容的要求,而且能够实现基膜的偏振无关调制.仿真结果表明该调制器在2.95μm到3.05μm的中红外波段能够实现高于20 dB的消光比,TE和TM模式的插入损耗都低于1.3 dB,其偏振相关损耗低于1.09 dB.通过计算,当器件长度为420μm,能够获得高达9.47 GHz的3 dB带宽.“,”This paper proposes a 3-μm mid-infrared band polarization-independent and CMOS-compatible gra?phene modulator,which mainly includes two parts:the mode conversion structure and the graphene modulator. This modulator not only fulfills the requirement of compatibility with CMOS,but also can achieve polarization-in?dependent modulation of the fundamental mode. Simulation results show that this modulator can achieve an ex?tinction ratio(ER)higher than 20 dB in the mid-infrared band from 2. 95μm to 3. 05μm,the insert loss for both TE and TM modes are less than 1. 3 dB,and polarization-dependent loss is less than 1. 09 dB. Through the calcu?lation,the 3 dB bandwidth up to 9. 47 GHz can be obtained when the length of the device is 420μm.