用椭圆偏振仪测量了O+2 注入Si后的椭偏参数Φ和Δ ,给出了离子注入辐射损伤与注入剂量和注入能量的关系 .同时 ,对离子注入片在N2 气氛中进行等时热退火 ,测量了Φ和Δ ,给出了O+2 注入Si的退火特性 .结果表明 :O+2 注入Si的退火特性曲线 ,对不同的注入剂量和注入能量分别为“V”形和“W”形 .对此结果 ,我们进行了初步地分析和讨论 The ellipsometric parameters Φ and Δ were measured by ellipsometry after O + 2 was implanted into Si, and the relationship between ion implantation radiation damage and implantation dose and implantation energy was given. Meanwhile, the isothermal heat treatment Annealing and measuring Φ and Δ, the annealing characteristics of Si implanted with O + 2 are given.The results show that the annealing curves of Si implanted with O + 2 are different for different implantation dose and implantation energy of “V” and “W” For this result, we conducted a preliminary analysis and discussion