论文部分内容阅读
为了降低类金刚石(DLC)薄膜的应力,使用脉冲真空电弧离子镀(PVAD)和电子束热蒸发相结合的复合沉积技术,在Si基底上制备了一系列不同锗含量(原子百分比)的Ge-DLC薄膜样片,研究了锗含量对DLC薄膜光学特性和力学特性的影响。研究结果表明:在1~5μm波段,当锗掺杂含量小于25%时,对DLC薄膜光学常数的影响不大;随着Ge含量的增加,DLC薄膜的折射率和消光系数都略微增大。随着DLC薄膜中Ge含量的增加,薄膜的内应力和硬度均有所降低。当DLC薄膜中Ge含量约为8%时,Ge-DLC薄膜的内应力从6.3降至3.0 GPa,而硬度仅从3875减小为3640 kgf/mm2,几乎保持不变。硅基底上单面沉积Ge的含量为8%的DLC薄膜在红外3~5μm波段的透过率峰值约为63.15%。
In order to reduce the stress of DLC films, a series of Ge-Si (Ge-Si) films with different germanium content (atomic percentage) were prepared on Si substrate by using the composite deposition technology combined pulse pulse plasma arc electron deposition (PVAD) and electron beam thermal evaporation DLC film samples, studied the germanium content of DLC film optical and mechanical properties. The results show that the refractive index and extinction coefficient of DLC films are slightly increased with the increase of Ge content when the doping amount of germanium is less than 25% in 1 ~ 5μm band. With the increase of Ge content in the DLC film, the internal stress and hardness of the film are reduced. When the content of Ge in DLC film is about 8%, the internal stress of Ge-DLC film decreases from 6.3 to 3.0 GPa, while the hardness decreases from 3875 to 3640 kgf / mm2, almost unchanged. The DLC film with a Ge content of 8% deposited on one surface of a silicon substrate has a peak transmittance of about 63.15% in the infrared band of 3-5 μm.