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用抗弯强度方法测定不同含氮量的原生和经550℃,750℃及900℃不等时热处理后直拉硅(NCZ-Si)的力学性能变化,结合红外光谱分析热处理过程氧、氮含量及形态的改变,认为在含氮直拉硅中,氮是以聚集在位错周围的氮氧硅络合物及氮氧硅沉淀初期微粒等多种形式钉扎位错的。
The flexural strength was used to measure the mechanical properties of NCZ-Si with different content of nitrogen and heat treatment at different temperatures of 550 ℃, 750 ℃ and 900 ℃. Combining with infrared spectroscopy, the oxygen and nitrogen contents And morphological changes. It is considered that in the nitrogen-containing Czochralski silicon, nitrogen is used to pin the dislocations in various forms such as the oxynitride complex aggregated around the dislocations and the primary particles of the oxynitride.