A one-dimensional continuous analytic potential solution to a generic oxide-silicon-oxide system is developed.With the analytic solution,the potential distribution in the silicon film is predicted.A physics-based relation between surface potentials is also derived and then applied to the generic oxide-silicon-oxide metal-oxide-semiconductor fieldeffect transistors (MOSFETs) for the calculation of surface potentials A one-dimensional continuous analytic potential solution to a generic oxide-silicon-oxide system is developed. Since the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is derived and then applied to the generic oxide-silicon-oxide metal-oxide-semiconductor fieldeffect transistors (MOSFETs) for the calculation of surface potentials