论文部分内容阅读
基于在任意坐标系内应力与应变的关系、晶体弹性理论和位错滑移理论,研究了生长方向分别为[111]和[211]晶向,HgCdTe外延薄膜临界厚度与CdZnTe衬底中Zn组分和HgCdTe外延层中Cd组分的关系.结果表明,HgCdTe外延薄膜临界厚度依赖于CdZnTe衬底中Zn组分和HgCdTe外延层中Cd组分的变化.对于厚度为10μm,生长方向为[111]晶向的液相外延HgCdTe薄膜,要确保HgCdTe/CdZnTe无界面失配位错的前提条件,是CdZnTe衬底中Zn组分和HgCdTe外延层中Cd组分的波动必须分别在±0.225‰和±5‰范围内;而对于相同厚度,生长方向为[211]晶向的分子束外延HgCdTe薄膜,CdZnTe衬底中Zn组分和HgCdTe外延层中Cd组分的波动范围分别为±0.2‰和±4‰.
Based on the relationship between stress and strain in any coordinate system, crystal elasticity theory and dislocation slip theory, the growth directions of [111] and [211] are respectively studied. The critical thickness of HgCdTe epitaxial film and the Zn group in CdZnTe substrate The results show that the critical thickness of HgCdTe epitaxial film depends on the change of Cd content in the ZnZnTe substrate and the HgCdTe epitaxial layer. For the thickness of 10μm, the growth direction is [111 ] Crystal orientation HgCdTe thin film, to ensure HgCdTe / CdZnTe misinterface mismatch preconditions, CdZnTe substrate and HgCdTe epitaxial layer of Cd component fluctuations must be within ± 0.225 ‰ and ± 5 ‰, while for the HgCdTe films with the same growth direction and orientation of [211], the fluctuation range of Cd content in the Zn and CdSnTe substrates was ± 0.2 ‰ and ± 4 ‰.