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在处理硅片过程中,为清除外延生长前的 SiO_2和残留的缺陷而进行的气相腐蚀是最重要的一项工艺。为了简化装置和防止扩散现象,它要求尽量在低温下进行。过去使用 HCl 和 H_2S 对硅进
Vapor phase etching to remove pre-epitaxial growth and residual defects is the most important process during wafer processing. In order to simplify the installation and to prevent the phenomenon of proliferation, it requires as low as possible. In the past using HCl and H_2S into silicon