一年一度的国际固体电路会议(ISSCC)于1987年2月25～27日在美国纽约举行。会议上发表的论文,反映了过去一年在集成电路方面的进展.总的来看,日本人仍然保持着上升的势头(尤其在存储器方面),而在微处理器和模拟芯片方面,英国仍处于领先地位.在动态存储器(DRAM)方面,1Mb 已成为过去,尽管在7篇DRAM 的论文中4Mb 的占了5篇,但更引人注目的还是日本NTT 的16Mb DRAM.为了实现这一空前的高密 The annual International Solid State Circuits Conference (ISSCC) was held in New York, United States on February 25-27, 1987. Papers published at the conference reflected the progress made in integrated circuits in the past year, and the Japanese generally maintained their upward trend (especially in terms of memory). In terms of microprocessors and analog chips, the United Kingdom In the leading position in the dynamic memory (DRAM), 1Mb has become the past, although in the seven DRAM 4Mb accounted for 5 papers, but more attractive is Japan’s NTT 16Mb DRAM.In order to achieve this unprecedented High density