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利用皮秒激光直写还原绝缘石墨烯氧化物(GO)薄膜,成功制备了图案化的导电石墨烯。先通过旋涂法制备GO薄膜,再使用皮秒激光进行直写扫描,可以同步实现GO的还原和图案化两个关键步骤。光学显微镜成像显示,还原前后GO颜色发生明显变化,图案结构清晰,分辨率较高。结合拉曼光谱和X光电子能谱(XPS)进行表征分析的结果表明,激光直写区域石墨层缺陷程度和含氧量均明显降低,GO还原程度较高。图案化还原后GO(RP-GO)薄膜电学测试的结果表明,可以通过改变皮秒激光的输出功率对RP-GO的导电性能进行调控。本文技术一次性解决了石墨烯的大规模制备、图案化成形和电学性能调控三大难题,开辟了石墨烯基微电子器件生产制造的新道路。
The patterned conductive graphene was successfully prepared by using picosecond laser direct writing reduction of the graphene oxide (GO) thin film. GO thin film prepared by spin-coating method, and then use the picosecond laser for direct write scanning can be achieved simultaneously GO reduction and patterning two key steps. Optical microscope imaging showed that the color of GO changed significantly before and after reduction, the pattern structure was clear and the resolution was high. The results of characterization and analysis by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the defect degree and the oxygen content of graphite layer in laser direct-writing region were significantly reduced, and the degree of GO reduction was high. The results of GO (RP-GO) thin film electrical test after patterned reduction show that the conductivity of RP-GO can be controlled by changing the output power of picosecond laser. The technology of this paper solves the three major problems of large-scale preparation, pattern formation and electrical property control of graphene at one go, and opens up a new road for the production of graphene-based microelectronic devices.