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介绍了一种用光栅作为外反馈元件，采用普通大功率半导体激光器管芯作为增益介质的方案。实验中实现了输出功率大于７０ｍＷ，边模抑制比大于３０ｄＢ。并对影响大功率外腔半导体激光器特性的参数进行了分析
A scheme of using grating as external feedback element and common high power semiconductor laser die as gain medium is introduced. In the experiment, the output power is more than 70mW and the side mode rejection ratio is more than 30dB. The parameters that affect the characteristics of high power external cavity semiconductor laser are also analyzed