We report the characterization of serf-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 1Onm×5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi2 NW is estimated to be 225 μΩ·cm.Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3±0.1 Bohr magneton per iron atom for these FeSi2 NWs.