论文部分内容阅读
通过转移矩阵法和有效折射率法计算了9·0μmGaAs基量子级联激光器波导的模式损耗和限制因子,从而对其波导结构进行优化.计算中考虑了各外延层的厚度、脊宽和腔长的影响.给出了在较低阈值下节约材料生长时间的各外延层厚度.
The mode loss and the limiting factor of the 9 · 0μm GaAs quantum cascade laser waveguide were calculated by the transfer matrix method and the effective refractive index method, and the waveguide structure was optimized. The thickness, ridge width and cavity length of each epitaxial layer The thickness of each epitaxial layer that saves material growth time at a lower threshold is given.