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氧化锌(ZnO)是一种用途广泛用途的新型半导体材料,具有优良的电学和光学特性,是制备半导体发光器和半导体激光器的理想材料。其制备方法有很多,射频磁控溅镀法因膜层结构均匀、致密、性能良好而被广泛应用。本文研究了溅镀压力、氧气浓度、溅镀功率和基板温度对溅镀工艺的影响,得出了最佳控制参数,对溅镀工艺的提高,氧化锌(ZnO)薄膜电气性能的提升具有积极意义。
Zinc oxide (ZnO) is a new type of semiconductor material for a wide range of uses. It has excellent electrical and optical properties and is an ideal material for preparing semiconductor light emitters and semiconductor lasers. There are many preparation methods, RF magnetron sputtering method because of the film structure is uniform, dense, good performance and is widely used. In this paper, the effects of sputtering pressure, oxygen concentration, sputtering power and substrate temperature on the sputtering process were studied, and the optimal control parameters were obtained. With the improvement of the sputtering process and the improvement of the electrical properties of the ZnO thin film, significance.