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铁电薄膜与底电极之间由于高温扩散而形成了界面层，且观察到其对薄膜电性能的影响类似于硅衬底上铁电薄膜的异质结效应。基于能带理论的考虑，建立物理模型来解释其影响。该界面异质结模型不仅可以解释铁电薄膜的界面分层、电滞回线不对称等现象，而且还成功地解释了电滞回线中心在极化轴上的偏移和疲劳循环过程中的偏移增加，并探讨了这种偏移对铁电薄膜疲劳特性的影响。
The interfacial layer formed between the ferroelectric thin film and the bottom electrode due to the high temperature diffusion and its effect on the electrical properties of the thin film is observed to be similar to the heterojunction effect of the ferroelectric thin film on the silicon substrate. Based on the theory of band theory, a physical model is established to explain its impact. The interface heterojunction model can not only explain the interface delamination and the hysteresis loop of ferroelectric thin films, but also successfully explain the hysteresis loop of the hysteresis loop on the polarization axis and the fatigue cycle The influence of this offset on the fatigue properties of ferroelectric thin films was also discussed.