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采用射频磁控溅射方法制备了Er/Yb共掺ZnO薄膜,研究了退火处理对高浓度Er/Yb共掺ZnO薄膜的结构演化和光致发光(PL)特性的影响。X射线衍射分析结果表明:Er/Yb掺杂导致ZnO薄膜的晶粒细化及择优取向性消失,ZnO晶粒随退火温度的增加而逐渐长大。900℃退火时,出现Er3+、Yb3+偏析,退火温度高于1000℃时,薄膜与基体间发生了界面反应,1200℃时,ZnO完全转变为Zn2SiO4相。光致发光测量结果表明:高于900℃退火处理后,Er/Yb共掺ZnO薄膜在1540 nm附近具有明显的光致发光,发光强度在退火温度为1050℃时达到最大值;光致发光光谱呈现典型的晶体基质中Er3+离子发光光谱所具有的明锐多峰结构特征。此外,探讨了薄膜结构演化及其对光致发光光谱的影响。
The Er / Yb co-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of annealing on the structure evolution and PL properties of high concentration Er / Yb codoped ZnO thin films were investigated. The results of X-ray diffraction analysis show that the doping of Er / Yb leads to the disappearance of the grain refinement and the preferred orientation of ZnO thin films, and the growth of ZnO grains grows with the increase of annealing temperature. Er3 + and Yb3 + segregation occurred at 900 ℃. When the annealing temperature was higher than 1000 ℃, the interfacial reaction occurred between the film and the matrix. At 1200 ℃, ZnO completely transformed into Zn2SiO4 phase. The results of photoluminescence measurements show that the Er / Yb codoped ZnO thin films have obvious photoluminescence near 1540 nm after annealed at 900 ℃, and the luminescence intensity reaches the maximum at the annealing temperature of 1050 ℃. The photoluminescence spectra The Er3 + ion luminescence spectrum of the typical crystal matrix shows the sharp and multimodal structure. In addition, the evolution of the film structure and its effect on the photoluminescence spectra were discussed.