论文部分内容阅读
通过基底曲率法设计和制作了一种测量薄膜应力的装置,它具有全场性、非接触性、高分辨率、无破坏、数据获取速度快等特点.使用该装置测量了电化学腐蚀法制作的多孔硅薄膜的残余应力,并研究了孔隙率和基底掺杂浓度对残余应力的影响,结果表明随着孔隙率的增加和硼离子掺杂浓度的提高,多孔硅表面的拉伸应力逐渐加大,由此表明多孔硅薄膜的微观结构与残余应力的大小有着密切的联系.
A device to measure the film stress was designed and manufactured by the base curvature method, which has the characteristics of full field, non-contact, high resolution, no damage, fast data acquisition, etc. The device was used to measure the electrochemical corrosion , And the effect of porosity and substrate doping concentration on the residual stress was investigated. The results show that the tensile stress of porous silicon surface gradually increases with the increase of porosity and the increase of boron ion doping concentration It shows that the microstructure of porous silicon film is closely related to the residual stress.