论文部分内容阅读
用法国制IMS 300型离子微分析仪对SiO_2/C-Si,Si_3N_4/C-Si及α-Si:H/C-Si样品中的钠进行深度分布分析。实验结果指出α-Si:H膜掩蔽钠离子的能力最强,Si_3N_4次之,SiO_2最差。
The depth distribution of sodium in SiO_2 / C-Si, Si_3N_4 / C-Si and α-Si: H / C-Si samples was analyzed by French IMS 300 ion microanalyzer. The experimental results indicate that the α-Si: H film has the strongest ability of covering sodium ions, followed by Si_3N_4 and the worst of SiO_2.