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酸刻蚀多晶硅表面技术是当前太阳能研究的热点之一。利用亚硝酸钠比硝酸钠氧化能力弱的特点,在普通酸刻蚀液中用亚硝酸钠取代硝酸配制多晶硅表面刻蚀液,然后在相同的工艺条件下刻蚀多晶硅表面。实验样品的SEM显示:含有NaNO2酸刻蚀液使多晶硅表面能布满蚯蚓状的腐蚀坑,腐蚀坑的深度比传统的酸刻蚀的陷阱坑深,而且密度分布比较均匀,样品平均反射率下降到23.5%,与传统配方酸刻蚀液刻蚀的多晶硅表面相比,平均反射率下降了8%左右。
Acid etching polysilicon surface technology is currently one of the hot spots in solar energy research. The use of sodium nitrite than sodium nitrate oxidation is weak in the characteristics of ordinary acid etching solution with sodium nitrite to replace nitric acid prepared polysilicon surface etching solution, and then etching the polysilicon surface under the same process conditions. The SEM of the experimental samples shows that the surface of polycrystalline silicon is covered with earthworm-like corrosion pits containing NaNO2 acid etching solution. The depth of the corrosion pits is deeper than that of the conventional acid etching traps, and the density distribution is relatively uniform. The average reflectivity decreases To 23.5%. Compared with the polysilicon surface etched by traditional acid etching solution, the average reflectance decreased about 8%.