论文部分内容阅读
对电荷耦合器件进行了不同剂量率的γ辐照实验,通过多种参数的测试探讨了剂量率与电荷耦合器件性能退化的关系,并对损伤的物理机理进行分析。辐照和退火结果表明:暗信号和暗信号非均匀性是γ辐照的敏感参数,电荷转移效率和饱和输出电压随剂量累积有缓慢下降的趋势;暗场像素灰度值整体抬升,像元之间的差异显著增加;电荷耦合器件的暗信号增量与剂量率呈负相关性,器件存在潜在的低剂量率损伤增强效应。分析认为,剂量率效应是由界面态和氧化物陷阱电荷竞争导致的。通过电子-空穴对复合模型、质子输运模型和界面态形成对机理进行了解释。
The experiments of γ-irradiation with different dose rates of charge-coupled devices were carried out. The relationship between the dose rate and the performance degradation of charge-coupled devices was discussed by testing various parameters. The physical mechanism of damage was also analyzed. Irradiation and annealing results show that dark signal and dark signal non-uniformity are sensitive parameters of γ irradiation, charge transfer efficiency and saturation output voltage decrease slowly with dose accumulation; ; The dark signal increment of charge-coupled device is negatively correlated with the dose rate, and the device has potential low-dose-rate damage enhancement effect. Analysis suggests that the dose-rate effect is caused by interface states and oxide trap charge competition. The mechanism is explained by electron-hole pair recombination model, proton transport model and interface state formation.