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报道了用1064nm激光脉冲触发半绝缘GaAs光电导开关的一种奇特光电导现象.GaAs光电导开关的电极间隙为4mm,当偏置电场分别为2 0和6 0kV/cm时,用脉冲能量为0 8mJ,宽度为5ns的激光触发开关,观察到开关输出的线性和非线性工作模式.当偏置电场增至9 5kV/cm,触发光脉冲能量在0 5~1 0mJ范围时,观察到奇特的光电导现象,开关先输出一个线性电脉冲,经过大约 20~250ns时间延迟后,触发光脉冲消失,开关又输出一个非线性电脉冲.这一奇特光电导现象的物理机制与半绝缘GaAs中的反位缺陷和吸收机制有关.分析计算了线性与非线性电脉冲之间的延迟时间,结果与实验观察基本吻合.
Reported a peculiar photoconductive phenomenon triggered by 1064nm laser pulses in semi-insulating GaAs photoconductive switches.The gap of GaAs photoconductive switches was 4mm, when the bias electric field was 20 and 60kV / cm respectively, 0 8mJ, 5ns width of the laser-triggered switch to observe the switch output linear and non-linear mode of operation when the bias electric field increased to 95kV / cm, triggering light pulse energy in the range of 0 5 ~ 1 0mJ observed odd Of the photoconductive phenomenon, the switch first output a linear electrical pulse, after about 20 ~ 250ns time delay, the trigger pulse disappears, the switch outputs a nonlinear electrical pulse. The physical mechanism of this strange photoconductive phenomenon and semi-insulating GaAs The anti-phase defect and the absorption mechanism.Analyzed and calculated the delay time between linear and non-linear electric pulses, the results basically agree with the experimental observations.