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半导体垂直腔面发射激光器（ＶＣＳＥＬＳ）近几年来取得了很大的进展，其重要的原因就是引人了高铝组分的ＡＩＧａＡＳ湿氧化技术．ＡＩＡｓ选择性氧化所形成的电流窗口，其直径可降至～ｌｐｍ，从而使ＶＣＳＥＬｓ的阈值电流降至五毫安以下，并增加了泵浦到有源区的效率，同
Semiconductor vertical cavity surface emitting lasers (VCSELS) have made great strides in recent years, an important reason for which is the introduction of AIGaAS wet oxidation of high-aluminum components. The current window formed by AIAs selective oxidation can be reduced to ~ lpm in diameter, reducing the threshold current of VCSELs below 5 mA and increasing the efficiency of pumping to the active region,