本文叙述了一种能实用于半导体集成电路的低温退火离子注入电阻.它具有高精度低温漂的特点,与常规的离子注入电阻和扩散电阻相比,其温度系数要小一个数量级以上,并且能与MOS和双极型集成电路工艺相容. This paper describes a low temperature annealed ion implanted resistor that can be used in semiconductor integrated circuits. It has the characteristics of high precision and low temperature drift. Compared with conventional ion implantation resistance and diffusion resistance, its temperature coefficient is smaller by more than an order of magnitude, Compatible with MOS and bipolar IC technology.