论文部分内容阅读
,Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN
【机 构】
：
Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian Unive
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2011年3期
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