【摘 要】
：
The graded bandgap of kesterite based absorber layer is an important way to achieve high efficiency solar cells.Incorporation of Ag into CZTSSe thin films can adjust the bandgap and thus reduce the Voc-deficit and improve the quality of crystallization.Ho
【机 构】
：
Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Fil
论文部分内容阅读
The graded bandgap of kesterite based absorber layer is an important way to achieve high efficiency solar cells.Incorporation of Ag into CZTSSe thin films can adjust the bandgap and thus reduce the Voc-deficit and improve the quality of crystallization.However,the distribution of Ag is difficult to control due to the quick diffusion of Ag under the high temperature.In this study,we achieve the front Ag-gradient in kesterite structured compound films by prealloying followed by selenization process at 550 ℃.AgZn3,Ag3Sn,and Sn-Ag-Cu alloy phases were formed during prealloying stage at 250 ℃.After prealloying process,Ag tends to distribute at the front surface of the ACZTSe thin films.Combining the results of experiment and SCAPS simulation,the significantly Voc improvement of devices is ascribed to the formation of the front Ag-gradient bandgap structure in the absorber layer.This facile prealloying selenization process affords a feasible method to design the graded bandgap structure absorber layers,which will promote the fabrication of high efficient graded bandgap structure solar cells.
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