论文部分内容阅读
CeO2/YSZ/CeO2 buffer layers were prepared on biaxial textured Ni-5at.%W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO thin films were deposited on CeO2/YSZ/CeO2 buffered Ni-5at.%W substrate at temperature ranging from 500°C to 700°C by diode dc sputtering. By optimizing substrate temperature, pure c-axis oriented YBCO films were obtained. The microstructures of CeO2/YSZ/CeO2 buffer layers were characterized by X-ray diffraction. A smooth, dense and crack-free surface morphology was observed with scanning electron microscopy. The critical current dens ity Jc about 0.75 MA/cm2 at 77 K was obtained.
CeO2 / YSZ / CeO2 buffer layers were prepared on biaxial textured Ni-5at.% W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO thin films were deposited on CeO2 / YSZ / CeO2 buffered Ni- The microstructures of CeO2 / YSZ / CeO2 buffer layers were characterized by X-ray diffraction. A temperature range from 500 ° C to 700 ° C by diode dc sputtering. smooth, dense and crack-free surface morphology was observed with scanning electron microscopy. The critical current density Jc about 0.75 MA / cm2 at 77 K was obtained.