A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is pro
The valley splitting has been realized in the graphene/Ni heterostructure with the splitting value of 14 meV,and the obtained valley injecting efficiency from t
Effect of heating time on the structural,morphology,optical,and photocatalytic properties of graphitic carbon nitride(g-C3N4)nanosheets prepared at 550℃in Ar a