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通过反应磁控溅射制备了一系列不同Si3N4层厚的HfC/Si3N4纳米多层膜,采用X射线光电子能谱、X射线衍射、扫描电子显微镜和微力学探针表征了多层膜的微结构、硬度与弹性模量,研究了Si3N4层厚度变化对纳米多层膜微结构与力学性能的影响。结果表明,溅射的Si3N4粒子不与C2H2气体反应,因NaCl结构HfC晶体调制层的模板效应,溅射态为非晶的Si3N4层在厚度小于约1 nm时被强制晶化,并与HfC晶体层形成共格外延生长结构,多层膜呈现强烈的(111)择优取向柱状晶,其硬度和弹性模量显著上升,最高值分别达到38.2 GPa和343 GPa。进一步增加Si3N4层的厚度后,Si3N4层转变为以非晶态生长,多层膜的共格外延生长结构受到破坏,其硬度和模量也相应降低。
A series of HfC / Si3N4 multilayer films with different Si3N4 layer thicknesses were prepared by reactive magnetron sputtering. The microstructures of multilayer films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and micromechanical probe , Hardness and elastic modulus, the influence of the thickness of Si3N4 layer on the microstructure and mechanical properties of the nano-multilayers was studied. The results show that the sputtered Si3N4 particles do not react with C2H2 gas. Due to the template effect of the NaCl-modulated HfC crystal layer, the sputtered Si3N4 layer is forcibly crystallized at a thickness of less than about 1 nm, Layer formed a coextensive epitaxial growth structure. The multilayers showed a strong (111) preferential oriented columnar crystal with a marked increase in hardness and elastic modulus, with the highest values of 38.2 GPa and 343 GPa, respectively. After further increasing the thickness of the Si3N4 layer, the Si3N4 layer changes to amorphous growth, the structure of the multilayer epitaxial growth is destroyed, and the hardness and the modulus of the Si3N4 layer decrease accordingly.