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采用离子束溅射沉积法,在单晶Si基片上制备了不同厚度(1—100nm)的Co纳米薄膜.利用原子力显微镜、X射线光电子能谱(XPS)仪和X射线衍射仪对不同厚度的Co纳米薄膜进行了分析和研究.结果表明:当薄膜厚度为1—10nm时,沉积颗粒形态随薄膜厚度增加将由二维生长的细长胞状过渡到多个颗粒聚集成的球状.当膜厚大于10nm时,小颗粒球聚集成大颗粒球,颗粒球呈现三维生长状态.表面粗糙度随膜厚的增加呈现先增加后减小的趋势,在膜厚为3nm时出现极值.XPS全程宽扫描和窄扫描显示:薄膜表面的元素成分为Co,化学态分别为Co,CoO和Co2O3.
Different thickness (1-100nm) Co nanofilms were prepared on single crystal Si substrate by ion beam sputtering deposition method. The effects of different thickness Co nanostructured films were studied.The results show that the morphologies of the deposited particles change from the elongated cells of two-dimensional growth to the spherical aggregates of multiple particles with the thickness of the films increasing from 1 to 10 nm.When the film thickness is larger than At 10nm, the small particle spheres aggregated into large particle spheres, the particle spheres showed a three-dimensional growth state.The surface roughness increased first and then decreased with the increase of film thickness, And narrow scan shows: the elemental composition of the film surface is Co, the chemical states were Co, CoO and Co2O3.